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| N-CHANNEL POWER MOSFET SSH8N80A FEATURES BVDSS = 800V * * * * * * * Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 25A (Max.) @ VDS = 800V Lower RDS(ON): 1.000 (Typ.) 1 2 3 RDS(ON) = 1.5 ID = 8A TO-3P ABSOLUTE MAXIMUM RATINGS Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Characteristics Drain-to-Source Voltage Continuous Drain Current (TC = 25C) Continuous Drain Current (TC = 100C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC = 25C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds y x x z x Value 800 8 5.1 32 30 444 8 24 2.0 240 1.92 -55 to +150 1. Gate 2. Drain 3. Source Units V A A V mJ A mJ V/ns W W/C C 300 THERMAL RESISTANCE Symbol RJC RCS RJA Characteristics Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. - 0.24 - Max. 0.52 - 40 C/W Units REV. B 1 1999 Fairchild Semiconductor Corporation SSH8N80A N-CHANNEL POWER MOSFET ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise specified) Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristics Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage, Forward Gate-Source Leakage, Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain (Miller) Charge Min. 800 - 2.0 - - - - - - - - - - - - - - - - Typ. - 0.96 - - - - - - 6.56 2020 195 82 25 37 113 42 93 14.3 42.1 Max. - - 3.5 100 -100 25 250 1.5 - 2600 230 95 60 85 235 95 120 - - nC VDS=640V, VGS=10V ID=9A See Fig 6 & Fig 12 { | ns VDD=400V, ID=9A RG=10 See Fig 13 pF Units V V/C V nA A S Test Conditions VGS=0V, ID=250A ID=250A, VGS=30V VGS= -30V VDS=800V VDS=640V, TC=125C VGS=10V, ID=4A VDS=50V, ID=4A VGS=0V, VDS=25V f=1MHz See Fig 5 { { See Fig 7 VDS=5V, ID=250A {| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD trr Qrr Characteristics Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge x { Min. - - - - - Typ. - - - 560 8.4 Max. 8 32 1.4 - - Units A V ns C Test Conditions Integral reverse pn-diode in the MOSFET TJ=25C, IS=8A, VGS=0V TJ=25C, IF=9A diF/dt=100A/s { Notes: x Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature y L=13mH, IAS=8A, VDD=50V, RG=27, Starting TJ =25C z ISD 9A, di/dt 180A/s, VDD BVDSS, Starting TJ =25C { Pulse Test: Pulse Width 250s, Duty Cycle 2% | Essentially Independent of Operating Temperature 2 N-CHANNEL POWER MOSFET SSH8N80A Fig 1. Output Characteristics VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : Fig 2. Transfer Characteristics 1 0 1 ID , Drain Current [A] 10 0 ID , Drain Current [A] 11 0 10 0 1 0 oC 5 2 oC 5 @Nts: oe 1 V =0V . GS 2 V =5 V . DS 0 us et 3 2 0 s P l e T s .5 6 8 1 0 1 -1 0 1 -1 0 10 0 @Nts: oe 1 2 0 s P l e T s .5 us et 2 T = 2 oC .C 5 11 0 - 5 oC 5 1 -1 0 2 4 VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current 5 Fig 4. Source-Drain Diode Forward Voltage IDR , Reverse Drain Current [A] RDS(on) , [ ] Drain-Source On-Resistance 4 V =1 V 0 GS 3 11 0 2 V =2 V 0 GS 1 @ N t : T = 2 oC oe J 5 0 0 5 1 0 1 5 2 0 2 5 3 0 3 5 4 0 10 0 @Nts: oe 1 V =0V . GS 2 2 0 s P l e T s .5 us et 08 . 10 . 12 . 1 0 oC 5 2 oC 5 1 0 -1 02 . 04 . 06 . ID , Drain Current [A] VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage 30 00 C =C +C (C =sotd) iss gs gd ds h r e C =C +C oss ds gd C =C rss gd Fig 6. Gate Charge vs. Gate-Source Voltage V =10V 6 DS V =40V 0 DS V =60V 4 DS 1 0 20 00 VGS , Gate-Source Voltage [V] C iss Capacitance [pF] 5 10 00 C oss C rss 00 1 0 1 0 1 @Nts: oe 1 V =0V . GS 2 f=1Mz . H @Nts:I =90A oe . D 0 0 2 0 4 0 6 0 8 0 10 0 VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC] 3 SSH8N80A N-CHANNEL POWER MOSFET Fig 7. Breakdown Voltage vs. Temperature 12 . 30 . Fig 8. On-Resistance vs. Temperature BVDSS , (Normalized) Drain-Source Breakdown Voltage 11 . RDS(on) , (Normalized) Drain-Source On-Resistance 25 . 20 . 10 . 15 . 10 . @Nts: oe 1 V =1 V . GS 0 2 I =45A .D . -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7 09 . @Nts: oe 1 V =0V . GS 2 I = 2 0 A .D 5 -0 5 -5 2 0 2 5 5 0 7 5 10 0 o 05 . 08 . -5 7 15 2 10 5 15 7 00 . -5 7 TJ , Junction Temperature [ C] TJ , Junction Temperature [oC] Fig 9. Max. Safe Operating Area Oeaini Ti Ae prto n hs ra i L m t d b R DS(on) s iie y 1 s 0 Fig 10. Max. Drain Current vs. Case Temperature 1 0 12 0 ID , Drain Current [A] 11 0 1m s 1m 0s D C 10 0 @Nts: oe 1 T = 2 oC .C 5 2 T = 1 0 oC .J 5 3 Snl Ple . ige us 1 -2 0 11 0 12 0 1 0 s 0 ID , Drain Current [A] 8 6 4 1 -1 0 2 13 0 0 2 5 5 0 7 5 10 0 15 2 10 5 VDS , Drain-Source Voltage [V] Tc , Case Temperature [oC] Fig 11. Thermal Response Thermal Response D=0.5 @ Notes : 1. Z J C (t)=0.52 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Z J C (t) PDM 10- 1 0.2 0.1 0.05 ZJC (t) , 0.02 0.01 10- 2 10- 5 single pulse t1 t2 10- 4 10- 3 10- 2 10- 1 100 101 t1 , Square Wave Pulse Duration [sec] 4 N-CHANNEL POWER MOSFET SSH8N80A Fig 12. Gate Charge Test Circuit & Waveform Current Regulator 50K 12V 200nF 300nF Same Type as DUT VGS Qg 10V VDS VGS DUT 3mA Qgs Qgd R1 Current Sampling (IG) Resistor R2 Current Sampling (ID) Resistor Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vin RG DUT Vin 10V td(on) t on tr td(off) t off tf 10% Vout VDD ( 0.5 rated VDS ) 90% Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms LL VDS Vary tp to obtain required peak ID BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD BVDSS IAS C VDD VDD tp ID RG DUT 10V tp ID (t) VDS (t) Time 5 SSH8N80A N-CHANNEL POWER MOSFET g y DUT + VDS -- IS L Driver RG VGS Same Type as DUT VGS VDD * dv/dt controlled by G * IS controlled by Duty Factor ? VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop 6 TO-3P Package Dimensions TO-3P (FS PKG CODE AF) 15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05 +0.15 12.76 0.20 19.90 0.20 16.50 0.30 3.00 0.20 1.00 0.20 3.50 0.20 2.00 0.20 13.90 0.20 23.40 0.20 18.70 0.20 1.40 0.20 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] 0.60 -0.05 +0.15 Dimensions in Millimeters August 1999, Rev B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM DISCLAIMER ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. |
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